"国产在线拍揄自揄拍" The Raw Silicon Wafer
Specifications: 3 inch to 4 inch monocrystalline silicon N light silicon chip, 3 inch to 4 inch silicon N/P type silicon wafer
By adding phosphorus or boron doped, using MCZ technology, the production size is 3 inch, 4 inch, 0 日本中文字幕在线. 003-55 resistor. Cm, 200-350um thickness of different type N or type P monocrystalline silicon wafer, and silicon wafer edge positioning production according to customer requirements, chamfered silicon, N silicon, P silicon etc. the resistivity and thickness, production according to customer requirements. .
- File name
- File download
- The Raw Silicon Wafer parameter configuration table
- 3-inch mono crystal silicon N-type light doped waferparameter configuration table
- 4-inch mono crystal silicon N-type light doped wafer parameter configuration table
- 3-inch mono crystal silicon heavy doped wafer parameter configuration table
- 4 inch monocrystal silicon heavy doped wafer parameter configuration table
3-inch mono crystal silicon N-type light doped wafer
ResistivityΩ·CM | Thicknessμm | Crystal Orientation | Lifeμs | External Diametermm | Dopant | Form | Radial uniformitty of resistivity | ||||
AS cut | Lapping | Chamfering | Flattingiece | ||||||||
5-10 | 200-350 | <111> | ＞100 | 76.2±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
10-15 | 200-350 | <111> | ＞100 | 76.2±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
15-20 | 200-350 | <111> | ＞100 | 76.2±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
20-25 | 200-350 | <111> | ＞100 | 76.2±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
25-30 | 200-350 | <111> | ＞100 | 76.2±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
30-35 | 200-350 | <111> | ＞100 | 76.2±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
35-40 | 200-350 | <111> | ＞100 | 76.2±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
40-45 | 200-350 | <111> | ＞100 | 76.2±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
45-50 | 200-350 | <111> | ＞100 | 76.2±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
50-55 | 200-350 | <111> | ＞100 | 76.2±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
"www国产亚洲精品久久网站" 4-inch mono crystal silicon N-type light doped wafer
ResistivityΩ·CM | Thicknessμm | Crystal Orientation | Lifeμs | External Diametermm | Dopant | Form | Radial uniformitty of resistivity | ||||
AS cut | Lapping | Chamfering | Flattingiece | ||||||||
5-10 | 200-350 | <111> | ＞100 | 101.6±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
10-15 | 200-350 | <111> | ＞100 | 101.6±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
15-20 | 200-350 | <111> | ＞100 | 101.6±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
20-25 | 200-350 | <111> | ＞100 | 101.6±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
25-30 | 200-350 | <111> | ＞100 | 101.6±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
30-35 | 200-350 | <111> | ＞100 | 101.6±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
35-40 | 200-350 | <111> | ＞100 | 101.6±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
40-45 | 200-350 | <111> | ＞100 | 101.6±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
45-50 | 200-350 | <111> | ＞100 | 101.6±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
50-55 | 200-350 | <111> | ＞100 | 101.6±0.3 | Phosphorus | √ | √ | √ | √ | ≤20% | |
"欧美日韩国产精品一区二区三区" 3-inch mono crystal silicon heavy doped wafer
ResistivityΩ·CM | Thicknessμm | Crystal Orientation | Model | External Diametermm | Dopant | Form | Radial uniformitty of resistivity | ||||
AS cut | Lapping | Chamfering | Flattingiece | ||||||||
0.003-0.005 | 200-350 | <111> | N/P | 76.2±0.3 | Phosphorus/Boron | / | √ | √ | √ | / | |
0.005-0.008 | 200-350 | <111> | N/P | 76.2±0.3 | Phosphorus/Boron | / | √ | √ | √ | / | |
0.02-0.03 | 200-350 | <111> | N/P | 76.2±0.3 | Phosphorus/Boron | / | √ | √ | √ | / | |
4 inch monocrystal silicon heavy doped wafer
ResistivityΩ·CM | Thicknessμm | Crystal Orientation | Model | External Diametermm | Dopant | Form | Radial uniformitty of resistivity | ||||
AS cut | Lapping | Chamfering | Flattingiece | ||||||||
0.003-0.005 | 200-350 | <111> | N/P | 101.6±0.3 | Phosphorus/Boron | / | √ | √ | √ | / | |
0.005-0.008 | 200-350 | <111> | N/P | 101.6±0.3 | Phosphorus/Boron | / | √ | √ | √ | / | |
0.02-0.03 | 200-350 | <111> | N/P | 101.6±0.3 | Phosphorus/Boron | / | √ | √ | √ | / | |