EPI Chip (epitaxial chip)玖月影视 -
The epitaxial film is used as the carrier, and the special product characteristics are obtained by diffusion and glass passivation. The oscillations of the TRR waveform are smaller and the application interference is small. 日本中文字幕在线.
Epitaxial film is a monocrystalline silicon sheet which is grown on the surface of the substrate by an epitaxial process. The epitaxial film is used as the carrier, and the special product characteristics are obtained by diffusion and glass passivation. The oscillations of the TRR waveform are smaller and the application interference is small. 欧美日韩精品一区二区三区不卡.
It can meet the customer's long time work demand under the bad conditions such as high temperature, high humidity, strong electric field and so on 欧美日韩国产精品一区二区三区. .
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- EPI chip parameter configuration table

Parameter configuration table
Dimension | A | B | C | D |
Limits ±12 | Limits ±2 | Limits ±3 | Limits ±1 | |
1A | 50 | 12 | 27 | 2 |
2~4A | 64 | 12 | 41 | 2 |
3~6A | 72 | 12 | 49 | 2 |
5~8A | 84 | 12 | 61 | 2 |
8~10A | 95 | 12 | 72 | 2 |
Parameter | Symbol | SF50 | SF64 | SF72 | SF84 | SF95 | Unit |
Peak Inverse V | PIV | 100 ~ 800 | Volts | ||||
Forward Current | IF | 1 | 3 | 5 | 8 | 10 | Amps |
Forward Volts | VF | PIV:200V VF spec. 0.9 PIV:400V VF spec. 1.25 PIV:600V VF spec. 1.7 PIV:800V VF spec. 2.2 | Volts | ||||
Reverse recovery time | TRR | 20~35 | ns | ||||
Surge Current | IFSM | 30 | 100 | 125 | Amp/8.3ms | ||
Leakage at 100℃ | IRFM | 400 | uA | ||||
Junction Temp | TJ,MAX | 150 | Degrees ℃ | ||||
Leakage 25℃ | IRFM | 10.0 | uA | ||||
Storage Temp | TST | -65 ------- 150 | Degrees ℃ | ||||
Die Attach Temp | TD | 340~375 | Degrees ℃/2 min | ||||
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Low temperature rise product;
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